| PART |
Description |
Maker |
| AM28F256 AM28F256-120EC AM28F256-120ECB AM28F256-1 |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
| PEB2465H |
Voice Access - SICOFI4 (IOM) Single Chip CMO
|
Infineon
|
| AM27C512-120DC |
512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
AMD
|
| Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
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http://
SIEMENS A G
SIEMENS AG
|
| AM28F512-120EC AM28F512-120ECB AM28F512-120EE AM28 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
| FM93C06E FM93C06 FM93C06V FM93C06L FM93C06LZ FM93C |
256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
From old datasheet system
256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS)
256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IDT72235LB IDT72205LB IDT72225LB IDT72215LB IDT722 |
4K x 18 SyncFIFO, 5.0V
2K x 18 SyncFIFO, 5.0V
1K x 18 SyncFIFO, 5.0V
512 x 18 SyncFIFO, 5.0V
256 x 18 SyncFIFO, 5.0V
CMOS SyncFIFO?
Low Voltage 28-Bit Flat Panel Display Link Serializers; Package: TSSOP; No of Pins: 56; Container: Tape & Reel
TUBING, TFE 20GA
TUBE, THN, TEF, NAT, 24AWG
256 X 18 OTHER FIFO, 10 ns, PQFP64 PLASTIC, TQFP-64
256 X 18 OTHER FIFO, 15 ns, PQFP64 PLASTIC, TQFP-64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 256 X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 512 X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 2K X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 1K X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 4K X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 的CMOS SyncFIFOO 256 × 1812 × 18024 × 18048 × 18096 × 18
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 1K X 18 OTHER FIFO, 6.5 ns, PQCC68
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 2K X 18 OTHER FIFO, 6.5 ns, PQFP64
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Cypress Semiconductor, Corp.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technolog...
|
| AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
SPANSION
|
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| HD404342RFP HD404344RFP HD404C342RFP HD404C344RFP |
ROM: 2.048 words; RAM: 256; ; 4-bit microcomputer
ROM: 4.096 words; RAM: 256; ; 4-bit microcomputer
ROM: 1.024 words; RAM: 256; ; 4-bit microcomputer
|
Hitachi Semiconductor
|
| PCF85103C-2P/0011 |
256 x 8-bit CMOS EEPROM with I2C-bus interface; Package: SOT97-1 (DIP8); Container: Tube 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
|
NXP Semiconductors N.V.
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